IRSF3031 |
RFQ for IRSF3031 Required Field |
 |
| Technical/Catalog Information | IRSF3031 |
| Vendor | International Rectifier |
| Category | Integrated Circuits (ICs) |
| Package / Case | TO-220-3 (Straight Leads) |
| Mounting Type | Through Hole |
| Type | Low Side |
| Voltage - Supply | - |
| On-State Resistance | 155 mOhm |
| Current - Output / Channel | 4A |
| Current - Peak Output | - |
| Packaging | Tube |
| Input Type | Non-Inverting |
| Number of Outputs | 1 |
| Operating Temperature | -55°C ~ 150°C |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRSF3031 IRSF3031 |
| Product | Manufacturers | Pack | D/C |
| IRSF3031 | - | TO-220 | 98+ |
The IRSF3031 is a three-terminal monolithic SMART POWER MOSFET with built-in short circuit, over-temperature, ESD and over-voltage protections and dual set/reset threshold input.
The on-chip protection circuit latches off the power MOSFET in case the drain current exceeds 4A (typical) or the junction temperature exceeds 165°C (typical) and keeps it off until the input is driven below the Reset Threshold voltage. The drain-to-source voltage is actively clamped at 55V (typical) prior to the avalanche of the power MOSFET, thus improving its performance during turn-off with inductive loads.
The input requirements are very low (100A typical) which makes the IRSF3031 compatible with most existing designs based on standard power MOSFETs.
Typical Application |
Features |
| · Solenoid Driver· DC Motor Driver | · Extremely Rugged for Harsh Operating Environments· Over Temperature Protection· Over Current Protection· Active Drain-to-Source Clamp· ESD Protection· Compatible with Standard Power MOSFET· Low Operating Input Current· Monolithic Construction· Dual Set/Reset Threshold Inp |
|
Minimum |
Maximum |
Units |
Test Conditions | ||
| Vds,max | Continuous Drain to Source Voltage |
- |
50 |
V |
|
| Vin,max | Continuous Input Voltage |
0 |
8 | ||
| Ids | Continuous Drain Current |
- |
self limited |
Tc 25 | |
| Pd | Power Dissipation |
- |
30 |
W |
|
| EAS | Unclamped Single Pulse Inductive Energy |
- |
200 |
mJ |
|
| Vesd1 | Electrostatic Discharge Voltage (Human Body Model) |
- |
4000 |
V |
1000pF. 1.5k |
| Vesd2 | Electrostatic Discharge Voltage (Machine Model) |
- |
1000 |
200pF, 0 | |
| TJop | Operating Junction Temperature Range |
-40 |
150 |
||
| TStg | Storage Temperature Range |
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